Aluminum oxide tunnel barriers for single electron memory devices
نویسندگان
چکیده
We report measurements on single electron memory devices where the memory island, a floating gate, is charged through aluminum oxide tunnel barriers, fabricated through plasma oxidation of aluminum and atomic layer deposition (ALD) of aluminum oxide. These devices are characterized at 300 mK and show a definite threshold for tunneling through the oxide barriers indicating a potential for nonvolatile memory. q 2005 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Journal
دوره 36 شماره
صفحات -
تاریخ انتشار 2005